DMT10H003SPSW-13

DMT10H003SPSW-13
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Part Number DMT10H003SPSW-13
Manufacturer Diodes Incorporated
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET BVDSS: 61V~100V POWERDI50
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models DMT10H003SPSW-13 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 17 - Jun 21 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

DMT10H003SPSW-13 Specifications

Part Number:DMT10H003SPSW-13
Brand:Diodes Incorporated
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Diodes Incorporated
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:152A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5542 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerDI5060-8 (Type Q)
Package / Case:8-PowerTDFN

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.08930$1.0893

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