FBG04N30BC

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Part Number	FBG04N30BC
Manufacturer	EPC Space, LLC
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GAN FET HEMT 40V30A COTS 4FSMD-B
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FBG04N30BC PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 08 - Dec 12 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

FBG04N30BC Specifications

Part Number:	FBG04N30BC
Brand:	EPC Space, LLC
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	EPC Space, LLC
Product Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs:	11.4 nC @ 5 V
Vgs (Max):	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:	1300 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-SMD
Package / Case:	4-SMD, No Lead

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