G3R350MT12D

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Part Number	G3R350MT12D
Manufacturer	GeneSiC Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SIC MOSFET N-CH 11A TO247-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	G3R350MT12D PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 19 - Dec 23 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

G3R350MT12D Specifications

Part Number:	G3R350MT12D
Brand:	GeneSiC Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	GeneSiC Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V
Rds On (Max) @ Id, Vgs:	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 15 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	334 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	74W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

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