For Reference Only
| Part Number | G3S12010D |
| Manufacturer | Global Power Technology-GPT |
| Category | Discrete Semiconductor › Diodes - Rectifiers - Single |
| Description | SIC SCHOTTKY DIODE 1200V 10A 2-P |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | G3S12010D PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 12 - Dec 16 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | G3S12010D |
| Brand: | Global Power Technology-GPT |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Diodes - Rectifiers - Single |
| Manufacturer: | Global Power Technology-GPT |
| Product Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io): | 33.2A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 10 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 50 µA @ 1200 V |
| Capacitance @ Vr, F: | 765pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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| In Stock | 7941 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $12.02000 | $12.02 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
