GC11N65F

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Part Number	GC11N65F
Manufacturer	Goford Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	N650V,RD(MAX)<360M@10V,VTH2.5V~4
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	GC11N65F PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 09 - Dec 13 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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GC11N65F Specifications

Part Number:	GC11N65F
Brand:	Goford Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Goford Semiconductor
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	11A
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	901 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	31.3W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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