RF1S30P06SM9A

RF1S30P06SM9A
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Part Number RF1S30P06SM9A
Manufacturer Harris Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description P-CHANNEL POWER MOSFET
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RF1S30P06SM9A PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 18 - Dec 22 2025(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RF1S30P06SM9A Specifications

Part Number:RF1S30P06SM9A
Brand:Harris Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Harris Corporation
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):135W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 72269 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

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