FF8MR12W2M1B11BOMA1

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Part Number	FF8MR12W2M1B11BOMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	MOSFET 2N-CH 1200V AG-EASY2BM-2
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FF8MR12W2M1B11BOMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jul 28 - Aug 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FF8MR12W2M1B11BOMA1 Specifications

Part Number:	FF8MR12W2M1B11BOMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Infineon Technologies
Product Status:	Last Time Buy
FET Type:	2 N-Channel (Dual)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	150A (Tj)
Rds On (Max) @ Id, Vgs:	7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id:	5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs:	372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:	11000pF @ 800V
Power - Max:	20mW (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-EASY2BM-2

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