For Reference Only
| Part Number | FS45MR12W1M1B11BOMA1 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
| Description | MOSFET MODULE 1200V 50A |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | FS45MR12W1M1B11BOMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 08 - Dec 12 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | FS45MR12W1M1B11BOMA1 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Infineon Technologies |
| Product Status: | Last Time Buy |
| FET Type: | 6 N-Channel (3-Phase Bridge) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tj) |
| Rds On (Max) @ Id, Vgs: | 45mOhm @ 25A, 15V (Typ) |
| Vgs(th) (Max) @ Id: | 5.55V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1840pF @ 800V |
| Power - Max: | 20mW (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | AG-EASY1BM-2 |
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| In Stock | 486 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $133.67000 | $133.67 |
| 24 | $127.35125 | $3056.43 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
