For Reference Only
| Part Number | APT9M100S/TR |
| Manufacturer | Microchip Technology |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET MOS8 1000 V 9 A TO-268 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | APT9M100S/TR PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 11 - Dec 15 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | APT9M100S/TR |
| Brand: | Microchip Technology |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Microchip Technology |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1000 V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.4Ohm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 80 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2605 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 335W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D3PAK |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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| In Stock | 11209 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $7.21000 | $7.21 |
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