PSMN018-100ESFQ

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Part Number	PSMN018-100ESFQ
Manufacturer	NXP Semiconductors
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	NEXPERIA PSMN018 - NEXTPOWER 100
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	PSMN018-100ESFQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 08 - Dec 12 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

PSMN018-100ESFQ Specifications

Part Number:	PSMN018-100ESFQ
Brand:	NXP Semiconductors
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	NXP Semiconductors
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	53A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	7V, 10V
Rds On (Max) @ Id, Vgs:	18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	21.4 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1482 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	111W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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