FDFME3N311ZT

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Part Number	FDFME3N311ZT
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SMALL SIGNAL FIELD-EFFECT TRANSI
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FDFME3N311ZT PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 10 - Dec 14 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

FDFME3N311ZT Specifications

Part Number:	FDFME3N311ZT
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	299mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.4 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	75 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	600mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-UMLP (1.6x1.6)
Package / Case:	6-UFDFN Exposed Pad

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