FQD12N20LTM-F085P

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Part Number	FQD12N20LTM-F085P
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 200V 9A TO252
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FQD12N20LTM-F085P PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 08 - Dec 12 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FQD12N20LTM-F085P Specifications

Part Number:	FQD12N20LTM-F085P
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	onsemi
Product Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1080 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 55W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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