MBT35200MT1G

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Part Number	MBT35200MT1G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS PNP 35V 2A 6TSOP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	MBT35200MT1G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 09 - Dec 13 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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MBT35200MT1G Specifications

Part Number:	MBT35200MT1G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	35 V
Vce Saturation (Max) @ Ib, Ic:	310mV @ 20mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1.5A, 1.5V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP

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