NJVBUB323ZT4G

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Part Number	NJVBUB323ZT4G
Manufacturer	onsemi
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN DARL 350V 10A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NJVBUB323ZT4G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 09 - Dec 13 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NJVBUB323ZT4G Specifications

Part Number:	NJVBUB323ZT4G
Brand:	onsemi
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	onsemi
Product Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	1.7V @ 250mA, 10A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	500 @ 5A, 4.6V
Power - Max:	150 W
Frequency - Transition:	2MHz
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK

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