RM12N650LD

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Part Number	RM12N650LD
Manufacturer	Rectron USA
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 650V 11.5A TO252-2
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RM12N650LD PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 15 - Dec 19 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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RM12N650LD Specifications

Part Number:	RM12N650LD
Brand:	Rectron USA
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rectron USA
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	870 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	101W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252-2
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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