BSM600C12P3G201

BSM600C12P3G201
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Part Number BSM600C12P3G201
Manufacturer Rohm Semiconductor
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 1200V 600A MODULE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSM600C12P3G201 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jul 25 - Jul 29 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSM600C12P3G201 Specifications

Part Number:BSM600C12P3G201
Brand:Rohm Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rohm Semiconductor
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2460W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:Module
Package / Case:Module

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In Stock 62 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1,120.00000$1

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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