RN1113ACT(TPL3)

RN1113ACT(TPL3)
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Part Number RN1113ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 50V 0.08A CST3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models RN1113ACT(TPL3) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 21 - Jun 25 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

RN1113ACT(TPL3) Specifications

Part Number:RN1113ACT(TPL3)
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):80 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-101, SOT-883
Supplier Device Package:CST3

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In Stock 50201 pieces - More on Order
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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.34000$0.34

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