TJ8S06M3L,LXHQ

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Part Number	TJ8S06M3L,LXHQ
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 60V 8A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TJ8S06M3L,LXHQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 15 - Dec 19 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TJ8S06M3L,LXHQ Specifications

Part Number:	TJ8S06M3L,LXHQ
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	19 nC @ 10 V
Vgs (Max):	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	890 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	27W (Tc)
Operating Temperature:	175°C
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK+
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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