TK39J60W5,S1VQ

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Part Number	TK39J60W5,S1VQ
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 600V 38.8A TO3P
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK39J60W5,S1VQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 15 - Dec 19 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TK39J60W5,S1VQ Specifications

Part Number:	TK39J60W5,S1VQ
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs:	135 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	4100 pF @ 300 V
FET Feature:	Super Junction
Power Dissipation (Max):	270W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(N)
Package / Case:	TO-3P-3, SC-65-3

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