TPN4R806PL,L1Q

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Part Number	TPN4R806PL,L1Q
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 72A 8TSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPN4R806PL,L1Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jul 28 - Aug 01 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TPN4R806PL,L1Q Specifications

Part Number:	TPN4R806PL,L1Q
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:	29 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2770 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	630mW (Ta), 104W (Tc)
Operating Temperature:	175°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSON Advance (3.1x3.1)
Package / Case:	8-PowerVDFN

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