TPN4R806PL,L1Q

TPN4R806PL,L1Q
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Part Number TPN4R806PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 72A 8TSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models TPN4R806PL,L1Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 26 - Jun 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

TPN4R806PL,L1Q Specifications

Part Number:TPN4R806PL,L1Q
Brand:Toshiba Semiconductor and Storage
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Semiconductor and Storage
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2770 pF @ 30 V
FET Feature:-
Power Dissipation (Max):630mW (Ta), 104W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.1x3.1)
Package / Case:8-PowerVDFN

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In Stock 41240 pieces - More on Order
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Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.97000$0.97

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