XPN9R614MC,L1XHQ

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Part Number	XPN9R614MC,L1XHQ
Manufacturer	Toshiba Semiconductor and Storage
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 40V 40A 8TSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	XPN9R614MC,L1XHQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 09 - Dec 13 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

XPN9R614MC,L1XHQ Specifications

Part Number:	XPN9R614MC,L1XHQ
Brand:	Toshiba Semiconductor and Storage
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Semiconductor and Storage
Product Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:	64 nC @ 10 V
Vgs (Max):	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	3000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	840mW (Ta), 100W (Tc)
Operating Temperature:	175°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSON Advance-WF (3.1x3.1)
Package / Case:	8-PowerVDFN