TP65H050WS

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Part Number	TP65H050WS
Manufacturer	Transphorm
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	GANFET N-CH 650V 34A TO247-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TP65H050WS PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 14 - Dec 18 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TP65H050WS Specifications

Part Number:	TP65H050WS
Brand:	Transphorm
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Transphorm
Product Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	12V
Rds On (Max) @ Id, Vgs:	60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:	24 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	119W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

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