For Reference Only
| Part Number | SI2315BDS-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET P-CH 12V 3A SOT23-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SI2315BDS-T1-GE3 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 09 - Dec 13 2025(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SI2315BDS-T1-GE3 |
| Brand: | Vishay Siliconix |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Vishay Siliconix |
| Product Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Rds On (Max) @ Id, Vgs: | 50mOhm @ 3.85A, 4.5V |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 4.5 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 715 pF @ 6 V |
| FET Feature: | - |
| Power Dissipation (Max): | 750mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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| In Stock | 78205 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000 | $0.28815 | $864.45 |
| 6000 | $0.26945 | $1616.7 |
| 15000 | $0.26010 | $3901.5 |
| 30000 | $0.25500 | $7650 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
