SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3
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Part Number SI7900AEDN-T1-GE3
Manufacturer Vishay Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 6A PPAK 1212-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI7900AEDN-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 17 - Jun 21 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SI7900AEDN-T1-GE3 Specifications

Part Number:SI7900AEDN-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Product Status:Active
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6A
Rds On (Max) @ Id, Vgs:26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® 1212-8 Dual
Supplier Device Package:PowerPAK® 1212-8 Dual

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Quick Inquiry

In Stock 86082 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.55760$1672.8

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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