SIHP11N80AE-GE3

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Part Number	SIHP11N80AE-GE3
Manufacturer	Vishay Siliconix
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 800V 8A TO220AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SIHP11N80AE-GE3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 09 - Dec 13 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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SIHP11N80AE-GE3 Specifications

Part Number:	SIHP11N80AE-GE3
Brand:	Vishay Siliconix
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Vishay Siliconix
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	42 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	804 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	78W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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