NXPSC08650D6J

Enlarge

For Reference Only

Part Number	NXPSC08650D6J
Manufacturer	WeEn Semiconductors
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	DIODE SCHOTTKY 650V 8A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NXPSC08650D6J PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 09 - Dec 13 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NXPSC08650D6J Specifications

Part Number:	NXPSC08650D6J
Brand:	WeEn Semiconductors
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	WeEn Semiconductors
Product Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650 V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 8 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	230 µA @ 650 V
Capacitance @ Vr, F:	260pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Operating Temperature - Junction:	175°C (Max)

VS-16F120M	DIODE GEN PURP 1.2KV 16A DO203AA	9276 More on Order
FFSB2065B-F085	SIC DIODE 650V	13986 More on Order
1N412RB	DO8 100 AMP SILICON RECTIFIER	6960 More on Order
VS-ETU1506-M3	DIODE GEN PURP 600V 15A TO220-2	58568 More on Order
ES1B-M3/5AT	DIODE GEN PURP 100V 1A DO214AC	91527 More on Order
RS1MDF-13	DIODE GEN PURP 1KV 1A DFLAT	98364 More on Order
S07D-GS18	DIODE GP 200V 700MA DO219AB	49460 More on Order
RS3JB-T R5G	150NS 3A 600V FAST RECOVERY RECT	32377 More on Order
JANS1N5622/TR	STD RECTIFIER	1836 More on Order
HT14G	DIODE GEN PURP 300V 1A TS-1	51325 More on Order
VS-30WQ10FNTRR-M3	DIODE SCHOTTKY DPAK	62845 More on Order
ES1G-HF	RECTIFIER SUPER FAST RECOVERY 40	63489 More on Order